%0 Journal Article %1 Kalss1998 %A Kalss, W. %A Haubne, R. %A Lux, B. %D 1998 %J Diamond and Related Materials %K Boron Chemical Etching deposition; nitride; vapor %N 2--5 %P 369--375 %R doi:10.1016/S0925-9635(97)00223-9 %T Preparation of BN films in the B---N---F system %V 7 %X Low-pressure diamond synthesis is today well established, while low-pressure cubic boron nitride (BN) synthesis is not, as yet, successful. For realizing a c-BN CVD process, effective selective etching reactions have to be formulated, enabling the removal of all non-cubic BN phases formed. Preliminary tests showed clearly that crystalline h-BN is etched preferentially in comparison to c-BN by a BF3/Ar gas mixture. Deposition experiments revealed that BN deposits could not be obtained from a BF3-N2-Ar gas mixture activated by means of a microwave plasma CVD process. A comparison with thermodynamic calculations confirmed this observation. However, BN-films could be deposited from BF3-N2-Ar-H2 gas mixtures. Thereby white-brownish deposits were obtained on CVD-diamond substrates. Variations of the gas phase compositions and substrate temperatures (500?700?C) influenced morphology and phase composition of the BN layers. The deposits obtained were characterized by scanning electron microscopy (SEM) and infra-red (IR)-spectroscopy. So far it has not been possible to identify clearly any c-BN deposits in our experiments.

@article{Kalss1998, abstract = {Low-pressure diamond synthesis is today well established, while low-pressure cubic boron nitride (BN) synthesis is not, as yet, successful. For realizing a c-BN CVD process, effective selective etching reactions have to be formulated, enabling the removal of all non-cubic BN phases formed. Preliminary tests showed clearly that crystalline h-BN is etched preferentially in comparison to c-BN by a BF3/Ar gas mixture. Deposition experiments revealed that BN deposits could not be obtained from a BF3-N2-Ar gas mixture activated by means of a microwave plasma CVD process. A comparison with thermodynamic calculations confirmed this observation. However, BN-films could be deposited from BF3-N2-Ar-H2 gas mixtures. Thereby white-brownish deposits were obtained on CVD-diamond substrates. Variations of the gas phase compositions and substrate temperatures (500?700?C) influenced morphology and phase composition of the BN layers. The deposits obtained were characterized by scanning electron microscopy (SEM) and infra-red (IR)-spectroscopy. So far it has not been possible to identify clearly any c-BN deposits in our experiments.}, added-at = {2009-11-05T12:01:24.000+0100}, author = {Kalss, W. and Haubne, R. and Lux, B.}, biburl = {https://www.bibsonomy.org/bibtex/24f1c5de87a85ec2b3645c69b6c4b44bc/ghuot}, doi = {doi:10.1016/S0925-9635(97)00223-9}, institution = {Institute for Chemical Technology of Inorganic Materials, University of Technology Vienna, Getreidemarkt 9/161, A-1060, Vienna, Austria}, interhash = {c377cb9036ed3432d24684aae6b5e031}, intrahash = {4f1c5de87a85ec2b3645c69b6c4b44bc}, journal = {Diamond and Related Materials}, keywords = {Boron Chemical Etching deposition; nitride; vapor}, number = {2--5}, owner = {Guillaume}, pages = {369--375}, timestamp = {2009-11-05T12:01:29.000+0100}, title = {Preparation of BN films in the B---N---F system}, volume = 7, year = 1998 }