%0 Journal Article %1 2053-1583-1-1-011004 %A Perea-López, Néstor %A Lin, Zhong %A Pradhan, Nihar R %A Iñiguez-Rábago, Agustín %A Elías, Ana Laura %A McCreary, Amber %A Lou, Jun %A Ajayan, Pulickel M %A Terrones, Humberto %A Balicas, Luis %A Terrones, Mauricio %D 2014 %J 2D Materials %K cvd grown monolayered mos2 %N 1 %P 011004 %T CVD-grown monolayered MoS 2 as an effective photosensor operating at low-voltage %U http://stacks.iop.org/2053-1583/1/i=1/a=011004 %V 1 %X We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS 2 synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS 2 on a SiO 2 /Si substrate. The device was operated in air at room temperature at low bias voltages ranging from −2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W −1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS 2 . A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS 2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.

@article{2053-1583-1-1-011004, abstract = {We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS 2 synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS 2 on a SiO 2 /Si substrate. The device was operated in air at room temperature at low bias voltages ranging from −2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W −1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS 2 . A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS 2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.}, added-at = {2014-04-30T16:58:34.000+0200}, author = {Perea-López, Néstor and Lin, Zhong and Pradhan, Nihar R and Iñiguez-Rábago, Agustín and Elías, Ana Laura and McCreary, Amber and Lou, Jun and Ajayan, Pulickel M and Terrones, Humberto and Balicas, Luis and Terrones, Mauricio}, biburl = {https://www.bibsonomy.org/bibtex/2ded11123447179ec1575ac9130592a69/maldegunde}, interhash = {c391b3528e1cebea58943c8fe01f1749}, intrahash = {ded11123447179ec1575ac9130592a69}, journal = {2D Materials}, keywords = {cvd grown monolayered mos2}, number = 1, pages = 011004, timestamp = {2014-04-30T16:58:34.000+0200}, title = {CVD-grown monolayered MoS 2 as an effective photosensor operating at low-voltage}, url = {http://stacks.iop.org/2053-1583/1/i=1/a=011004}, volume = 1, year = 2014 }