Аннотация
The atomic layer deposition (ALD) of boron nitride (BN) was demonstrated
on ZrO2 particles. The BN ALD was accomplished by splitting the binary
chemical vapor deposition reaction, BCl3+NH3->BN+3HCl, into BCl3
and NH3 half-reactions. BCl3 and NH3 were alternately applied in
an ABAB? reaction sequence at 500 K. Fourier transform infrared (FTIR)
spectroscopy observed that the O---H stretching vibration of the
ZrOH* surface species on the initial ZrO2 particles was removed by
the first BCl3 exposure. N---H2 asymmetric and symmetric stretching
vibrations attributed to BNH2* dihydride species and N---H stretching
vibrations assigned to B2NH* monohydride species were observed after
the subsequent NH3 exposure. The BNH2* and B2NH* species were removed
and added after the BCl3 and NH3 exposures, respectively. The surface
species were monitored during the first 26 AB cycles. FTIR spectroscopy
was also used to monitor the bulk BN vibrational feature that grew
progressively throughout the 26 AB cycles. After the 26 AB cycles
at 500 K, transmission electron microscopy studies revealed uniform
and conformal BN films with a thickness of not, vert, similar25 ?
on the ZrO2 particles.
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