%0 Journal Article %1 WOS:000229996300031 %A Medeiros, SK %A Albuquerque, EL %A Farias, GA %A Vasconcelos, MS %A Anselmo, DHAL %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND %D 2005 %I PERGAMON-ELSEVIER SCIENCE LTD %J SOLID STATE COMMUNICATIONS %K optical phonons} properties; semiconductors; {nanostructures; %N 1-2 %P 144-149 %R 10.1016/j.ssc.2005.02.027 %T Confinement of polar optical phonons in AlN/GaN superlattices %V 135 %X We study the optical-phonon spectra in heterojunctions fabricated from III to V nitride materials (GaN and AIN). We are concerned with the quaternary superlattice structure, namely, /substrate/AIN/AlxGa1-xN/GaN/AlxGa1-xN/... /, where the substrate is here considered to be a transparent dielectric medium like sapphire. We make use of a model based on the Frolich Hamiltonian, taking into account the macroscopic theory developed by Loudon, known as the continuum dielectric model. The optical-phonon modes are modelled considering only the electromagnetic boundary conditions (including retardation effects), in the absence of charge transfer between ions. Numerical results of the confined optical-phonon spectra are presented, characterizing three distinct optical-phonon classes designated as propagate (PR), interface (IF) and half-space (HS) modes. Furthermore, due to the dielectric anisotropy presented in the nitrides, some additional peculiarities will be presented, like dispersive confined modes. (c) 2005 Elsevier Ltd. All rights reserved.

@article{WOS:000229996300031, abstract = {We study the optical-phonon spectra in heterojunctions fabricated from III to V nitride materials (GaN and AIN). We are concerned with the quaternary superlattice structure, namely, /substrate/AIN/AlxGa1-xN/GaN/AlxGa1-xN/... /, where the substrate is here considered to be a transparent dielectric medium like sapphire. We make use of a model based on the Frolich Hamiltonian, taking into account the macroscopic theory developed by Loudon, known as the continuum dielectric model. The optical-phonon modes are modelled considering only the electromagnetic boundary conditions (including retardation effects), in the absence of charge transfer between ions. Numerical results of the confined optical-phonon spectra are presented, characterizing three distinct optical-phonon classes designated as propagate (PR), interface (IF) and half-space (HS) modes. Furthermore, due to the dielectric anisotropy presented in the nitrides, some additional peculiarities will be presented, like dispersive confined modes. (c) 2005 Elsevier Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, author = {Medeiros, SK and Albuquerque, EL and Farias, GA and Vasconcelos, MS and Anselmo, DHAL}, biburl = {https://www.bibsonomy.org/bibtex/2a8d413e59b3b20e478b9f2687720b0b7/ppgfis_ufc_br}, doi = {10.1016/j.ssc.2005.02.027}, interhash = {d832b6a325e4e1d96c547fc00639ef27}, intrahash = {a8d413e59b3b20e478b9f2687720b0b7}, issn = {0038-1098}, journal = {SOLID STATE COMMUNICATIONS}, keywords = {optical phonons} properties; semiconductors; {nanostructures;}, number = {1-2}, pages = {144-149}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Confinement of polar optical phonons in AlN/GaN superlattices}, tppubtype = {article}, volume = 135, year = 2005 }