%0 Conference Paper %1 8010122 %A Shabanpour, R. %A Meister, T. %A Ishida, K. %A Boroujeni, B. %A Carta, C. %A Ellinger, F. %A Petti, L. %A Münzenrieder, N. %A Salvatore, G. %A Tröster, G. %B 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS) %D 2017 %K myown %P 129-132 %R 10.1109/NEWCAS.2017.8010122 %T A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model %U https://ieeexplore.ieee.org/document/8010122/ %X This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations and parameters that enable an accurate and efficient behavioral representation of a-IGZO TFTs. In this work, we address the modelling of short channel effects, the scalability for channel lengths from 5 µm to 50 µm, as well as the presence of process variation. Using this model, a Cherry-Hooper amplifier is designed, analyzed, implemented in a flexible a-IGZO TFT technology, and characterized. Finally, to validate the presented transistor model, we compare circuit simulations and measurements of the Cherry-Hooper amplifier circuit. The amplifier provides a voltage gain of 9.5 dB and has a GBW of 7.2 MHz from a supply voltage of 6 V. The simulation using our new compact transistor model resembles the measured characteristics very well. It predicts a voltage gain of 10.4 dB and a GBW of 7.0 MHz.

@inproceedings{8010122, abstract = {This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations and parameters that enable an accurate and efficient behavioral representation of a-IGZO TFTs. In this work, we address the modelling of short channel effects, the scalability for channel lengths from 5 µm to 50 µm, as well as the presence of process variation. Using this model, a Cherry-Hooper amplifier is designed, analyzed, implemented in a flexible a-IGZO TFT technology, and characterized. Finally, to validate the presented transistor model, we compare circuit simulations and measurements of the Cherry-Hooper amplifier circuit. The amplifier provides a voltage gain of 9.5 dB and has a GBW of 7.2 MHz from a supply voltage of 6 V. The simulation using our new compact transistor model resembles the measured characteristics very well. It predicts a voltage gain of 10.4 dB and a GBW of 7.0 MHz.}, added-at = {2023-05-22T11:59:59.000+0200}, author = {Shabanpour, R. and Meister, T. and Ishida, K. and Boroujeni, B. and Carta, C. and Ellinger, F. and Petti, L. and Münzenrieder, N. and Salvatore, G. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2beca438acf0b15d87f49fe7af55ca54c/nikomu}, booktitle = {2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)}, doi = {10.1109/NEWCAS.2017.8010122}, interhash = {ee73110ff1be6d7c74f613fddbd33b7d}, intrahash = {beca438acf0b15d87f49fe7af55ca54c}, keywords = {myown}, month = {June}, pages = {129-132}, timestamp = {2023-05-22T11:59:59.000+0200}, title = {A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model}, url = {https://ieeexplore.ieee.org/document/8010122/}, year = 2017 }