%0 Journal Article %1 journals/ieiceee/KongYLYQ18 %A Kong, Debin %A Yuan, Jia %A Li, Shan-Shan %A You, Heng %A Qiao, Shushan %D 2018 %J IEICE Electron. Express %K dblp %N 20 %P 20180758 %T A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability. %U http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee15.html#KongYLYQ18 %V 15

@article{journals/ieiceee/KongYLYQ18, added-at = {2023-03-15T00:00:00.000+0100}, author = {Kong, Debin and Yuan, Jia and Li, Shan-Shan and You, Heng and Qiao, Shushan}, biburl = {https://www.bibsonomy.org/bibtex/206117315bfe7ccfe66f57b065c8591f1/dblp}, ee = {https://doi.org/10.1587/elex.15.20180758}, interhash = {fa51bea4965e19aa22eb04ccb1bd4700}, intrahash = {06117315bfe7ccfe66f57b065c8591f1}, journal = {IEICE Electron. Express}, keywords = {dblp}, number = 20, pages = 20180758, timestamp = {2024-04-09T06:47:40.000+0200}, title = {A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability.}, url = {http://dblp.uni-trier.de/db/journals/ieiceee/ieiceee15.html#KongYLYQ18}, volume = 15, year = 2018 }