%0 Journal Article %1 Novikov2010 %A Novikov, S. V. %A Foxon, C. T. %A Kent, A. J. %D 2010 %I WILEY-VCH Verlag %J physica status solidi (a) %K cubic experiment nitrides %N 6 %P 1277--1282 %R 10.1002/pssa.200983412 %T Growth and characterization of free-standing zinc-blende GaN layers and substrates %U http://dx.doi.org/10.1002/pssa.200983412 %V 207 %X We have investigated the growth of bulk, free-standing zinc-blende (cubic) GaN layers by plasma-assisted molecular beam epitaxy (PA-MBE). The PA-MBE technique was used for bulk crystal growth and GaN layers up to 100 µm in thickness were produced. We have established that the best structural properties of free-standing zinc-blende GaN can be achieved with initiation under Ga-rich conditions, but without Ga droplet formation. The procedure to produce free-standing bulk zinc-blende substrates from thick GaN layers grown on GaAs substrates has been developed. We have demonstrated the scalability of the process by growing free-standing GaN layers up to 3 in. in diameter. Growth of free-standing bulk GaN layers has allowed us to refine the values for the basic parameters of zinc-blende GaN. We have demonstrated also that the PA-MBE process we have developed has allowed us to achieve free-standing AlxGa1−xN wafers.

@article{Novikov2010, abstract = {We have investigated the growth of bulk, free-standing zinc-blende (cubic) GaN layers by plasma-assisted molecular beam epitaxy (PA-MBE). The PA-MBE technique was used for bulk crystal growth and GaN layers up to 100 µm in thickness were produced. We have established that the best structural properties of free-standing zinc-blende GaN can be achieved with initiation under Ga-rich conditions, but without Ga droplet formation. The procedure to produce free-standing bulk zinc-blende substrates from thick GaN layers grown on GaAs substrates has been developed. We have demonstrated the scalability of the process by growing free-standing GaN layers up to 3 in. in diameter. Growth of free-standing bulk GaN layers has allowed us to refine the values for the basic parameters of zinc-blende GaN. We have demonstrated also that the PA-MBE process we have developed has allowed us to achieve free-standing AlxGa1−xN wafers.}, added-at = {2011-06-17T12:03:29.000+0200}, author = {Novikov, S. V. and Foxon, C. T. and Kent, A. J.}, biburl = {https://www.bibsonomy.org/bibtex/2504846d12f2c81c89360df090441680c/lopusz}, doi = {10.1002/pssa.200983412}, interhash = {fafa58fb27710f663533de4a8278441e}, intrahash = {504846d12f2c81c89360df090441680c}, issn = {1862-6319}, journal = {physica status solidi (a)}, keywords = {cubic experiment nitrides}, number = 6, pages = {1277--1282}, publisher = {WILEY-VCH Verlag}, timestamp = {2011-06-17T12:03:29.000+0200}, title = {Growth and characterization of free-standing zinc-blende {GaN} layers and substrates}, url = {http://dx.doi.org/10.1002/pssa.200983412}, volume = 207, year = 2010 }