%0 Journal Article %1 WOS:000227204400025 %A Albuquerque, EL %A Barros, EB %A Freire, VN %A Mendes, J %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 2005 %I ELSEVIER %J PHYSICS LETTERS A %K GaN; films; graded interfaces} phonons; thin {optical %N 2-3 %P 259-263 %R 10.1016/j.physleta.2005.01.007 %T Interface optical phonon localization in graded GaN thin films %V 336 %X We use the macroscopic dielectric continuum model to calculate the dispersion relation of interface localized optical-phonon modes in GaN thin films grown on 6H-SiC or sapphire substrate, considering the presence of a multilayered AI(x)Gal(1-x)N interfacial region between the film and the substrate. The main influence of the number of layers n at the interface, which depends on the molar concentration x of the alloy AI(x)Gal(1-x)N, is to preclude localization of interface phonons. A small change on the phonon frequencies and branch slopes is also observed. (C) 2005 Elsevier B.V. All rights reserved.

@article{WOS:000227204400025, abstract = {We use the macroscopic dielectric continuum model to calculate the dispersion relation of interface localized optical-phonon modes in GaN thin films grown on 6H-SiC or sapphire substrate, considering the presence of a multilayered AI(x)Gal(1-x)N interfacial region between the film and the substrate. The main influence of the number of layers n at the interface, which depends on the molar concentration x of the alloy AI(x)Gal(1-x)N, is to preclude localization of interface phonons. A small change on the phonon frequencies and branch slopes is also observed. (C) 2005 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {Albuquerque, EL and Barros, EB and Freire, VN and Mendes, J}, biburl = {https://www.bibsonomy.org/bibtex/2a7d3a580ed9306d2dd40c23d18181c89/ppgfis_ufc_br}, doi = {10.1016/j.physleta.2005.01.007}, interhash = {fcb9328ec46a56d8714f6268641de634}, intrahash = {a7d3a580ed9306d2dd40c23d18181c89}, issn = {0375-9601}, journal = {PHYSICS LETTERS A}, keywords = {GaN; films; graded interfaces} phonons; thin {optical}, number = {2-3}, pages = {259-263}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Interface optical phonon localization in graded GaN thin films}, tppubtype = {article}, volume = 336, year = 2005 }