%0 Journal Article %1 journals/mr/XiaCWCJZYS14 %A Xia, Chao %A Cheng, Xinhong %A Wang, Zhongjian %A Cao, Duo %A Jia, Tingting %A Zheng, Li %A Yu, Yuehui %A Shen, Dashen %D 2014 %J Microelectron. Reliab. %K dblp %N 3 %P 582-586 %T A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. %U http://dblp.uni-trier.de/db/journals/mr/mr54.html#XiaCWCJZYS14 %V 54

@article{journals/mr/XiaCWCJZYS14, added-at = {2020-02-22T00:00:00.000+0100}, author = {Xia, Chao and Cheng, Xinhong and Wang, Zhongjian and Cao, Duo and Jia, Tingting and Zheng, Li and Yu, Yuehui and Shen, Dashen}, biburl = {https://www.bibsonomy.org/bibtex/2e011d77db9bbf5e1e62222fec79413fc/dblp}, ee = {https://doi.org/10.1016/j.microrel.2013.10.021}, interhash = {fcf2da2330db58ceef3d190581d8bdb4}, intrahash = {e011d77db9bbf5e1e62222fec79413fc}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = 3, pages = {582-586}, timestamp = {2020-02-25T13:30:31.000+0100}, title = {A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr54.html#XiaCWCJZYS14}, volume = 54, year = 2014 }