J. Kern, S. Großmann, N. Tarakina, T. Häckel, M. Emmerling, M. Kamp, J. Huang, P. Biagioni, J. Prangsma, and B. Hecht. Nano Lett., 12 (11):
5504-5509(Nov 14, 2012)<i style="font-style: normal;"><a href="https://arxiv.org/abs/1112.5008">» arXiv:1112.5008</a> <br><b>press:</b> <a href="http://www.nanowerk.com/news2/newsid=26870.php">» Atomic-scale confinement of resonant optical fields</a>, coverimage on <a href="http://www.pro-physik.de/details/opnews/2686931/Lokalisiertes_Lichtfeld_im_Luftspalt.html">» pro-physik.de</a> (german)</i>.
N. Jeffs, A. Blant, T. Cheng, C. Foxon, C. Bailey, P. Harrison, J. Mosselmans, and A. Dent. Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Symposium Held April 13-15, 1998, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings), 512, page 519. Materials Research Society, (1998)