%0 Journal Article %1 PhysRevB.101.161111 %A Moore, Marianne %A Surówka, Piotr %A Juričić, Vladimir %A Roy, Bitan %D 2020 %I American Physical Society %J Phys. Rev. B %K a %N 16 %P 161111 %R 10.1103/PhysRevB.101.161111 %T Shear viscosity as a probe of nodal topology %U https://link.aps.org/doi/10.1103/PhysRevB.101.161111 %V 101 %X Electronic materials can sustain a variety of unusual, but symmetry protected, touchings of valence and conduction bands, each of which is identified by a distinct topological invariant. Well-known examples include linearly dispersing pseudorelativistic fermions in monolayer graphene, Weyl and nodal-loop semimetals, biquadratic (bicubic) band touching in bilayer (trilayer) graphene, as well as mixed dispersions in multi-Weyl systems. Here, we show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator. Therefore, besides the density of states (governing specific heat, compressibility) and dynamic conductivity, shear viscosity can be instrumental to pin nodal topology in electronic materials.

@article{PhysRevB.101.161111, abstract = {Electronic materials can sustain a variety of unusual, but symmetry protected, touchings of valence and conduction bands, each of which is identified by a distinct topological invariant. Well-known examples include linearly dispersing pseudorelativistic fermions in monolayer graphene, Weyl and nodal-loop semimetals, biquadratic (bicubic) band touching in bilayer (trilayer) graphene, as well as mixed dispersions in multi-Weyl systems. Here, we show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator. Therefore, besides the density of states (governing specific heat, compressibility) and dynamic conductivity, shear viscosity can be instrumental to pin nodal topology in electronic materials.}, added-at = {2021-05-12T12:47:17.000+0200}, author = {Moore, Marianne and Surówka, Piotr and Juričić, Vladimir and Roy, Bitan}, biburl = {https://www.bibsonomy.org/bibtex/2906dd810434255d593f181bd887f3f6b/ctqmat}, day = 21, description = {Phys. Rev. B 101, 161111(R) (2020) - Shear viscosity as a probe of nodal topology}, doi = {10.1103/PhysRevB.101.161111}, interhash = {17a84fe3d2fd9ff281ecef901e7540fd}, intrahash = {906dd810434255d593f181bd887f3f6b}, journal = {Phys. Rev. B}, keywords = {a}, month = apr, number = 16, numpages = {6}, pages = 161111, publisher = {American Physical Society}, timestamp = {2023-11-24T11:25:11.000+0100}, title = {Shear viscosity as a probe of nodal topology}, url = {https://link.aps.org/doi/10.1103/PhysRevB.101.161111}, volume = 101, year = 2020 }