OPTIMIZATION OF DOPANT DIFFUSION AND ION
IMPLANTATION TO INCREASE INTEGRATION RATE
OF FIELD-EFFECT HETEROTRANSISTORS. AN APPROACH
TO SIMPLIFY CONSTRUCTION OF THE HETEROTRANSISTORS
E. Pankratov. Galileo Computing Galileo Press, Bonn, 3. aktualisierte und erw. Aufl. издание, (2015)
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%0 Book
%1 SWB-287523276
%A Pankratov, E.L.
%B Galileo Computing
%C Bonn
%D 2015
%I Galileo Press
%K Field-effect heterotransistors
%T OPTIMIZATION OF DOPANT DIFFUSION AND ION
IMPLANTATION TO INCREASE INTEGRATION RATE
OF FIELD-EFFECT HETEROTRANSISTORS. AN APPROACH
TO SIMPLIFY CONSTRUCTION OF THE HETEROTRANSISTORS
%U http://deposit.d-nb.de/cgi-bin/dokserv?id=3132049&prov=M&dok_var=1&dok_ext=htm
%7 3. aktualisierte und erw. Aufl.
%@ 978-3-8362-1302-8
@book{SWB-287523276,
added-at = {2017-03-10T12:03:11.000+0100},
address = {Bonn},
author = {Pankratov, E.L.},
biburl = {https://www.bibsonomy.org/bibtex/2f6253aa167d3c3af4a13f8fa1b62e388/gethzijose},
edition = {3. aktualisierte und erw. Aufl.},
interhash = {55263a328910f17219730b906a394636},
intrahash = {f6253aa167d3c3af4a13f8fa1b62e388},
isbn = {978-3-8362-1302-8},
keywords = {Field-effect heterotransistors},
publisher = {Galileo Press},
series = {Galileo Computing},
size = {633 S. : Ill. ; 168 mm x 240 mm ; 1 DVD},
timestamp = {2017-03-10T12:03:11.000+0100},
title = {OPTIMIZATION OF DOPANT DIFFUSION AND ION
IMPLANTATION TO INCREASE INTEGRATION RATE
OF FIELD-EFFECT HETEROTRANSISTORS. AN APPROACH
TO SIMPLIFY CONSTRUCTION OF THE HETEROTRANSISTORS},
url = {http://deposit.d-nb.de/cgi-bin/dokserv?id=3132049&prov=M&dok_var=1&dok_ext=htm},
year = 2015
}