Аннотация
This paper presents the design and performance comparison of a two stage
operational amplifier topology using CMOS and BiCMOS technology. This conventional op
amp circuit was designed by using RF model of BSIM3V3 in 0.6 μm CMOS technology and
0.35 μm BiCMOS technology. Both the op amp circuits were designed and simulated,
analyzed and performance parameters are compared. The performance parameters such as
gain, phase margin, CMRR, PSRR, power consumption etc achieved are compared. Finally,
we conclude the suitability of CMOS technology over BiCMOS technology for low power RF design.
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