%0 Journal Article %1 WOS:000230206900041 %A de Vasconcelos, EA %A da Silva, EF %A dos Santos, BECA %A de Azevedo, WM %A Freire, JAK %C POSTFACH 101161, 69451 WEINHEIM, GERMANY %D 2005 %I WILEY-V C H VERLAG GMBH %J PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE %K imported %N 8 %P 1539-1542 %R 10.1002/pssa.200461177 %T A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch %V 202 %X We report a new method to form reproducible luminescent porous silicon layers in p-type and n-type substrates of low and high resisivity, with minimum apparatus and maximum simplicity. No equipment, formation of electrical contacts, illumination or addition of surfactants is needed. The porous silicon layer is formed by exposing the Si surface to the vapor generated by a dissolution reaction of a metal or Si in a HF/HNO3 mixture. The PL spectra of the layers have peaks located from 1.85 eV to 2.1 eV. The current-voltage characteristics of A1/PS/p-Si/A1 devices formed on these layers are rectifying and follow an exponential dependence at low forward bias and a power law at high forward bias. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

@article{WOS:000230206900041, abstract = {We report a new method to form reproducible luminescent porous silicon layers in p-type and n-type substrates of low and high resisivity, with minimum apparatus and maximum simplicity. No equipment, formation of electrical contacts, illumination or addition of surfactants is needed. The porous silicon layer is formed by exposing the Si surface to the vapor generated by a dissolution reaction of a metal or Si in a HF/HNO3 mixture. The PL spectra of the layers have peaks located from 1.85 eV to 2.1 eV. The current-voltage characteristics of A1/PS/p-Si/A1 devices formed on these layers are rectifying and follow an exponential dependence at low forward bias and a power law at high forward bias. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY}, author = {de Vasconcelos, EA and da Silva, EF and dos Santos, BECA and de Azevedo, WM and Freire, JAK}, biburl = {https://www.bibsonomy.org/bibtex/2e420c874de4a6f8a2418e58a945d1d41/ppgfis_ufc_br}, doi = {10.1002/pssa.200461177}, interhash = {61deba2427d8ceab0a12f100dd2f1d43}, intrahash = {e420c874de4a6f8a2418e58a945d1d41}, issn = {1862-6300}, journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, keywords = {imported}, note = {4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004), Cullera, SPAIN, MAR 14-19, 2004}, number = 8, pages = {1539-1542}, publisher = {WILEY-V C H VERLAG GMBH}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch}, tppubtype = {article}, volume = 202, year = 2005 }