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Disambiguation of "Freire, JAK"

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A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch

, , , , and . PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 202 (8): 1539-1542 (2005)4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004), Cullera, SPAIN, MAR 14-19, 2004.
DOI: 10.1002/pssa.200461177

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Jak Cvitanic

Crishane Freire

Rodolpho Freire

Im-Jak Jeon

Wladimir Sierra Freire

 

Other publications of authors with the same name

Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single quantum wells, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 191-194 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Si- and SiGe- high-k oxide nanostructures for optoelectronic devices, , , , , and . Quantum Sensing and Nanophotonic Devices II, volume 5732 of PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), page 538-546. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots, , , and . APPLIED SURFACE SCIENCE, 237 (1-4): 266-269 (2004)7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003.Exciton trapping in a periodically modulated magnetic field, , , and . BRAZILIAN JOURNAL OF PHYSICS, 32 (2): 310-313 (2002)10th Brazillian Workshop on Semiconductor Physics (BWSP 10), GUARUJA, BRAZIL, APR 22-27, 2001.Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 247-251 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Fine structure of excitons in a quantum well in the presence of a nonhomogeneous magnetic field, , , , and . PHYSICAL REVIEW B, 62 (11): 7316-7324 (2000)Polaron effect on D- centers in weakly polar semiconductors, , , , , , , and . PHYSICAL REVIEW B, 57 (7): 3900-3904 (1998)Interface-related band-bending effects on intersubband transitions in doped GaAs/AlxGa1-xAs single quantum wells, , , and . JOURNAL OF PHYSICS-CONDENSED MATTER, 10 (43): 9681-9686 (1998)Statistical analysis of topographic images of nanoporous silicon and model surfaces, , , , , , and . MICROELECTRONICS JOURNAL, 36 (11, SI): 1011-1015 (2005)4th Workshop on Semiconductor Nanodevices and Nanostructured Materials, Sao Pedro, BRAZIL, MAR 09-13, 2005.Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices, , , , , and . APPLIED PHYSICS LETTERS, (2005)