%0 Conference Paper %1 conf/drc/GaoJXWHW18 %A Gao, J. %A Jin, Y. %A Xie, B. %A Wen, C. P. %A Hao, Y. %A Wang, M. %B DRC %D 2018 %I IEEE %K dblp %P 1-2 %T GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology. %U http://dblp.uni-trier.de/db/conf/drc/drc2018.html#GaoJXWHW18 %@ 978-1-5386-3028-0

@inproceedings{conf/drc/GaoJXWHW18, added-at = {2020-10-01T00:00:00.000+0200}, author = {Gao, J. and Jin, Y. and Xie, B. and Wen, C. P. and Hao, Y. and Wang, M.}, biburl = {https://www.bibsonomy.org/bibtex/23600e820c2a78858be514df1eb2cbd13/dblp}, booktitle = {DRC}, crossref = {conf/drc/2018}, ee = {https://doi.org/10.1109/DRC.2018.8442184}, interhash = {ca389fbedcfcbb0ec9d5bc15020607a8}, intrahash = {3600e820c2a78858be514df1eb2cbd13}, isbn = {978-1-5386-3028-0}, keywords = {dblp}, pages = {1-2}, publisher = {IEEE}, timestamp = {2024-04-09T23:47:17.000+0200}, title = {GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.}, url = {http://dblp.uni-trier.de/db/conf/drc/drc2018.html#GaoJXWHW18}, year = 2018 }