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GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

J. Gao, Y. Jin, B. Xie, C. Wen, Y. Hao, and M. Wang. DRC, page 1-2. IEEE, (2018)

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Wenjin Hao

Xiaofei Hao

Jin Hao

Jun Hao

Haijun Hao

Other publications of authors with the same name

Discovering patterns to extract protein–protein interactions from the literature: part IIY. Hao, X. Zhu, M. Huang, and M. Li. Bioinformatics, (2005)Buried Object Sensing Considering Curved PipelineS. Shah, Z. Zhang, A. Ren, N. Zhao, X. Yang, W. Zhao, J. Yang, J. Zhao, W. Sun, and Y. Hao. IEEE Antennas and Wireless Propagation Letters, (2017)A Large Hadron Electron Collider at CERNA. Fernandez, C. Adolphsen, P. Adzic, A. Akay, H. Aksakal, J. Albacete, B. Allanach, S. Alekhin, P. Allport, V. Andreev and 198 other author(s). (Nov 20, 2012)GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.J. Gao, Y. Jin, B. Xie, C. Wen, Y. Hao, and M. Wang. DRC, page 1-2. IEEE, (2018)Scalarization of Henig Properly Efficient Points in Locally Convex Spaces.J. Qiu, and Y. Hao. J. Optimization Theory and Applications, 147 (1): 71-92 (2010)A Large Hadron Electron Collider at CERN: Report on the Physics and Design Concepts for Machine and DetectorJ. Fernandez, C. Adolphsen, A. Akay, H. Aksakal, J. Albacete, S. Alekhin, P. Allport, V. Andreev, R. Appleby, E. Arikan and 183 other author(s). (Sep 7, 2012)The role of the JAK2-STAT3 pathway in pro-inflammatory responses of EMF-stimulated N9 microglial cellsX. Yang, G. He, Y. Hao, C. Chen, M. Li, Y. Wang, G. Zhang, and Z. Yu. J Neuroinflammation, (September 2010)Periodic and Chaotic Motions of FGM thin Plate with Two Simply Supported Opposite and Two Free Edges.Y. Hao, W. Zhang, and J. Yang. Int. J. Bifurc. Chaos, 21 (6): 1737-1753 (2011)Airport Signal Processing Architectures for Surface Movement Radar in Heavy Precipitation.C. Hou, C. Xia, Z. Zhou, C. Guo, and Y. Hao. ICDSP, page 157-163. ACM, (2021)Shallow donor states near a semiconductor-insulator-metal interfaceY. Hao, A. Djotyan, A. Avetisyan, and F. Peeters. PHYSICAL REVIEW B, (2009)

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Disambiguation of "Hao, Y."

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GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Please choose a person to relate this publication to

Wenjin Hao

Xiaofei Hao

Jin Hao

Jun Hao

Haijun Hao

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hao, Y."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Please choose a person to relate this publication to

Wenjin Hao

Xiaofei Hao

Jin Hao

Jun Hao

Haijun Hao

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.