%0 Conference Paper %1 noauthororeditor %A Corsino, Dianne C. %A Bestelink, Eva %A Catania, Federica %A Sporea, Radu A. %A Münzenrieder, Niko %A Cantarella, Giuseppe %B 2023 IEEE International Flexible Electronics Technology Conference (IFETC) %D 2023 %I IEEE %K myown %P 1-3 %R 10.1109/IFETC57334.2023.10254818 %T In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate %U https://doi.org/10.1109/IFETC57334.2023.10254818

@inproceedings{noauthororeditor, added-at = {2023-09-29T10:14:18.000+0200}, author = {Corsino, Dianne C. and Bestelink, Eva and Catania, Federica and Sporea, Radu A. and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/26202e400ffb77bada0ec8febe6aca2fa/nikomu}, booktitle = {2023 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC57334.2023.10254818}, interhash = {e62014f692092c64c66b924a4c6c9171}, intrahash = {6202e400ffb77bada0ec8febe6aca2fa}, keywords = {myown}, month = {August}, pages = {1-3}, publisher = {IEEE}, timestamp = {2023-09-29T10:14:18.000+0200}, title = {In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate}, url = {https://doi.org/10.1109/IFETC57334.2023.10254818}, year = 2023 }