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In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate

, , , , , and . 2023 IEEE International Flexible Electronics Technology Conference (IFETC), page 1-3. IEEE, (August 2023)
DOI: 10.1109/IFETC57334.2023.10254818

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