We present the results of the calculation of the low-temperature
electron mobility in one-side modulation-doped single asymmetric quantum
wells, taking into account the presence of residual impurities. The
effects of ionized acceptors were included in the variational
calculation within the depletion approximation. All relevant scattering
rates were taken into account, namely acoustic phonons, ionized
impurities (remote and background), alloy disorder and interface
roughness. The mobility dependencies on the electron gas density and
residual acceptor concentration were found and we show that the
background impurity scattering rate is the main scattering mechanism for
acceptor concentrations above similar to 3 x 10(15) cm(-3), in good
agreement to recent experimental works involving high-quality
GaAs/AlGaAs modulation-doped quantum wells. (C) 2002 Elsevier Science
B.V. All rights reserved.
%0 Journal Article
%1 WOS:000182700700115
%A Lima, FMS
%A Fonseca, ALA
%A Nunes, OAC
%A Qu, FY
%A Freire, VN
%A da Silva, EF
%C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
%D 2003
%I ELSEVIER SCIENCE BV
%J PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
%K acceptors; mobility; quantum residual single wells} {electron
%N 1-4
%P 322-323
%R 10.1016/S1386-9477(02)00824-X
%T Effect of residual acceptors on electron mobility in single asymmetric
quantum wells
%V 17
%X We present the results of the calculation of the low-temperature
electron mobility in one-side modulation-doped single asymmetric quantum
wells, taking into account the presence of residual impurities. The
effects of ionized acceptors were included in the variational
calculation within the depletion approximation. All relevant scattering
rates were taken into account, namely acoustic phonons, ionized
impurities (remote and background), alloy disorder and interface
roughness. The mobility dependencies on the electron gas density and
residual acceptor concentration were found and we show that the
background impurity scattering rate is the main scattering mechanism for
acceptor concentrations above similar to 3 x 10(15) cm(-3), in good
agreement to recent experimental works involving high-quality
GaAs/AlGaAs modulation-doped quantum wells. (C) 2002 Elsevier Science
B.V. All rights reserved.
@article{WOS:000182700700115,
abstract = {We present the results of the calculation of the low-temperature
electron mobility in one-side modulation-doped single asymmetric quantum
wells, taking into account the presence of residual impurities. The
effects of ionized acceptors were included in the variational
calculation within the depletion approximation. All relevant scattering
rates were taken into account, namely acoustic phonons, ionized
impurities (remote and background), alloy disorder and interface
roughness. The mobility dependencies on the electron gas density and
residual acceptor concentration were found and we show that the
background impurity scattering rate is the main scattering mechanism for
acceptor concentrations above similar to 3 x 10(15) cm(-3), in good
agreement to recent experimental works involving high-quality
GaAs/AlGaAs modulation-doped quantum wells. (C) 2002 Elsevier Science
B.V. All rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
author = {Lima, FMS and Fonseca, ALA and Nunes, OAC and Qu, FY and Freire, VN and da Silva, EF},
biburl = {https://www.bibsonomy.org/bibtex/26e808ad16757f9cb5bee35cd2f22ae41/ppgfis_ufc_br},
doi = {10.1016/S1386-9477(02)00824-X},
interhash = {f3c982453fdbdb77923bb1cc7266250c},
intrahash = {6e808ad16757f9cb5bee35cd2f22ae41},
issn = {1386-9477},
journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES},
keywords = {acceptors; mobility; quantum residual single wells} {electron},
note = {International Conference on Superlattices Nano-Structures and
Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002},
number = {1-4},
pages = {322-323},
publisher = {ELSEVIER SCIENCE BV},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Effect of residual acceptors on electron mobility in single asymmetric
quantum wells},
tppubtype = {article},
volume = 17,
year = 2003
}