This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of $f_\,T$ and $f_\,MAX$ with a maximum relative tuning up to 130% for $f_\,T$ and 170% for $f_\,MAX$ . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.
%0 Journal Article
%1 10288483
%A Catania, Federica
%A Saeedzadeh Khaanghah, Niloofar
%A Corsino, Dianne
%A Oliveira, Hugo de Souza
%A Carrasco-Pena, Alejandro
%A Ishida, Koichi
%A Meister, Tilo
%A Ellinger, Frank
%A Cantarella, Giuseppe
%A Münzenrieder, Niko
%D 2023
%J IEEE Transactions on Electron Devices
%K myown
%N 12
%P 6359-6363
%R 10.1109/TED.2023.3323914
%T AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact
%V 70
%X This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of $f_\,T$ and $f_\,MAX$ with a maximum relative tuning up to 130% for $f_\,T$ and 170% for $f_\,MAX$ . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.
@article{10288483,
abstract = {This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of ${f}_{\,\text {T}}$ and ${f}_{\,\text {MAX}}$ with a maximum relative tuning up to 130% for ${f}_{\,\text {T}}$ and 170% for ${f}_{\,\text {MAX}}$ . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.},
added-at = {2023-12-21T09:25:19.000+0100},
author = {Catania, Federica and Saeedzadeh Khaanghah, Niloofar and Corsino, Dianne and Oliveira, Hugo de Souza and Carrasco-Pena, Alejandro and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Cantarella, Giuseppe and Münzenrieder, Niko},
biburl = {https://www.bibsonomy.org/bibtex/270ea20508dad638f139e251268071b74/nikomu},
doi = {10.1109/TED.2023.3323914},
interhash = {1e078a4fe11e0c4381f87a5a0ee4daed},
intrahash = {70ea20508dad638f139e251268071b74},
issn = {1557-9646},
journal = {IEEE Transactions on Electron Devices},
keywords = {myown},
month = dec,
number = 12,
pages = {6359-6363},
timestamp = {2023-12-21T09:25:19.000+0100},
title = {AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact},
volume = 70,
year = 2023
}