%0 Journal Article %1 noauthororeditor %A Yelmule, Gaurav R. Agrawal | Leena A. %D 2018 %J International Journal of Trend in Scientific Research and Development %K CMOS IIP3 IMD3 LNA Low amplifier common complementary distortion input intercept intermodulation linearization metal noise nonlinearity order oxide point post semiconductor source third thirdorder %N 1 %P 829-835 %T Linear CMOS LNA %U http://www.ijtsrd.com/engineering/electronics-and-communication-engineering/19087/linear-cmos-lna/gaurav-r-agrawal %V 3 %X In this work, a highly linear Cascode CMOS LNA is presented. Linearity issues in RF receiver frontend are discussed, followed by an analysis of the specifications and requirements of a LNA through consideration of multi-standard LNA. Device non-linear characteristics cause linearity problems in the RF front-end system. To solve this problem, Post linearization technique for inductively degenerated L-deg common source Cascode Low Noise Amplifier is presented, which improves linearity performance with small gain loss and current consumption as consequence.The LNA presented has 1.0GHz - 3.2GHz frequency range designed using TSMC 0.18µm CMOS process. The linearized LNA achieves an IIP3 of 5.0 dBm, with P-1dB of -14 dBm, 13.8 dB gain max , NF 2.03dB and power utilization of 19.4 mWat 1.8 volt power supply Gaurav R. Agrawal | Leena A. Yelmule "Linear CMOS LNA" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-1 , December 2018, URL: http://www.ijtsrd.com/papers/ijtsrd19087.pdf

@article{noauthororeditor, abstract = {In this work, a highly linear Cascode CMOS LNA is presented. Linearity issues in RF receiver frontend are discussed, followed by an analysis of the specifications and requirements of a LNA through consideration of multi-standard LNA. Device non-linear characteristics cause linearity problems in the RF front-end system. To solve this problem, Post linearization technique for inductively degenerated L-deg common source Cascode Low Noise Amplifier is presented, which improves linearity performance with small gain loss and current consumption as consequence.The LNA presented has 1.0GHz - 3.2GHz frequency range designed using TSMC 0.18µm CMOS process. The linearized LNA achieves an IIP3 of 5.0 dBm, with P-1dB of -14 dBm, 13.8 dB gain max , NF 2.03dB and power utilization of 19.4 mWat 1.8 volt power supply Gaurav R. Agrawal | Leena A. Yelmule "Linear CMOS LNA" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-1 , December 2018, URL: http://www.ijtsrd.com/papers/ijtsrd19087.pdf }, added-at = {2019-04-19T07:24:45.000+0200}, author = {Yelmule, Gaurav R. Agrawal | Leena A.}, biburl = {https://www.bibsonomy.org/bibtex/2ef1e3a4d20f25ad51c1ce102a1b94f03/ijtsrd}, interhash = {3552a55fa997494efe7d523a0485a806}, intrahash = {ef1e3a4d20f25ad51c1ce102a1b94f03}, issn = {2456-6470}, journal = {International Journal of Trend in Scientific Research and Development}, keywords = {CMOS IIP3 IMD3 LNA Low amplifier common complementary distortion input intercept intermodulation linearization metal noise nonlinearity order oxide point post semiconductor source third thirdorder}, language = {English}, month = dec, number = 1, pages = {829-835}, timestamp = {2019-04-19T07:24:45.000+0200}, title = {Linear CMOS LNA }, url = {http://www.ijtsrd.com/engineering/electronics-and-communication-engineering/19087/linear-cmos-lna/gaurav-r-agrawal}, volume = 3, year = 2018 }