Abstract
Oxide breakdown in metal-oxide-semiconductor (MOS) devices in the
nanometer scale is simulated as a cluster growth depending process in
which the local electric field is a function of a randomly varying local
dielectric permissivity. Effects of MOS device bias polarity, film
thickness and non-uniform defect distributions through the entire oxide
film on the breakdown are studied. The slope of the Weibull distribution
increases with the oxide thickness in agreement with experimental
results. (C) 2002 Elsevier Science B.V. All rights reserved.
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