( en | de | ru )

 

Disambiguation of "Freire, VN"

Author of the publication

copydeleteadd this publication to your clipboard
The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors

, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 35-38 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.
DOI: 10.1016/S0169-4332(01)00882-0

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Matej Vnenčák

Crishane Freire

Rodolpho Freire

Wladimir Sierra Freire

Paulo Freire-Vieira

 

Other publications of authors with the same name

Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells, , , and . APPLIED SURFACE SCIENCE, 166 (1-4): 336-340 (2000)7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999.Strong exciton energy blue shift in annealed Si/SiO2 single quantum wells, , , , and . APPLIED SURFACE SCIENCE, 166 (1-4): 469-474 (2000)7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999.Effects of interfacial charges on semiconductor films, , , and . PHYSICAL REVIEW B, 57 (19): 12275-12280 (1998)Blue and red Stark shifts in single Si/SiO2 quantum wells, , , and . SUPERLATTICES AND MICROSTRUCTURES, 25 (1-2): 377-381 (1999)11th International Conference on Superlattices, Microstructures and Microdevices (ICSMM-11), HURGADA, EGYPT, JUL 27-31, 1998.Graded interface effects on the carriers confinement in single GaN/AlxGa1-xN wurtzite quantum wells, , and . SOLID STATE COMMUNICATIONS, 110 (10): 587-592 (1999)Energy states in graded spherical GaAs/AlxGa1-xAs quantum dots, , and . PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSCALE MATERIALS, DEVICES, AND SYSTEMS, volume 97 of ELECTROCHEMICAL SOCIETY SERIES, page 197-210. 10 S MAIN ST, PENNINGTON, NJ 08534-2896, Electrochem Soc, ELECTROCHEMICAL SOCIETY INC, (1997)4th International Symposium on Quantum Confinement - Nanoscale Materials, Devices, and Systems, at the 191st Meeting of the Electrochemical-Society, MONTREAL, CANADA, MAY 04-07, 1997.THE THERMALIZATION PROCESS OF PHOTOEXCITED ELECTRONS AND HOLES IN THE 2ND KINETIC STAGE OF RELAXATION, , , and . PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 180 (1): 213-222 (1993)ULTRAFAST RELAXATION OF HOT MINORITY-CARRIERS IN P-GAAS, , , and . JOURNAL OF APPLIED PHYSICS, 74 (3): 2122-2124 (1993)THE INFLUENCE OF INTERFACIAL GROWTH-PATTERNS ON THE TRANSMISSION PROPERTIES OF CARRIERS THROUGH NONABRUPT GAAS/ALXGA1-XAS SINGLE BARRIERS, , , and . SUPERLATTICES AND MICROSTRUCTURES, 17 (4): 411-414 (1995)ENERGY-LEVELS OF SINGLE NONABRUPT GAAS/ALXGA1-XAS QUANTUM-WELLS, , , and . SUPERLATTICES AND MICROSTRUCTURES, 17 (4): 397-400 (1995)