%0 Journal Article %1 woods2017modeling %A Woods, Z. %A Scoggin, J. %A Cywar, A. %A Adnane, L. %A Gokirmak, A. %D 2017 %J IEEE Transactions on Electron Devices %K (PCM),set Amorphization,finite-element and growth,phase-change memory modeling,nucleation reset %N 11 %R 10.1109/TED.2017.2745500 %T Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics during Set and Reset: Part II - Discrete Grains %V 64 %X © 2017 IEEE. We extend our finite-element model of nucleation, growth, and amorphization in phase-change memory devices to model discrete nucleation and grain boundaries, including the evolution of grains within fully crystalline material during long-term anneals. Electrothermal simulations of set and reset operations include a heat of crystallization model and an Arrhenius expression modeling thermionic emission at grain boundaries. Our simulations capture cycle-to-cycle variations due to stochastic nucleation and the interplay of crystallization, the formation of percolation paths, and thermal runaway.

@article{woods2017modeling, abstract = {{\textcopyright} 2017 IEEE. We extend our finite-element model of nucleation, growth, and amorphization in phase-change memory devices to model discrete nucleation and grain boundaries, including the evolution of grains within fully crystalline material during long-term anneals. Electrothermal simulations of set and reset operations include a heat of crystallization model and an Arrhenius expression modeling thermionic emission at grain boundaries. Our simulations capture cycle-to-cycle variations due to stochastic nucleation and the interplay of crystallization, the formation of percolation paths, and thermal runaway.}, added-at = {2019-01-03T22:40:30.000+0100}, author = {Woods, Z. and Scoggin, J. and Cywar, A. and Adnane, L. and Gokirmak, A.}, biburl = {https://www.bibsonomy.org/bibtex/28e88bf30d4b329a67f1766c4976d1037/jjs027}, doi = {10.1109/TED.2017.2745500}, interhash = {6760c824eb7eb3f20134311b52f48e51}, intrahash = {8e88bf30d4b329a67f1766c4976d1037}, issn = {00189383}, journal = {IEEE Transactions on Electron Devices}, keywords = {(PCM),set Amorphization,finite-element and growth,phase-change memory modeling,nucleation reset}, number = 11, timestamp = {2019-01-03T22:45:29.000+0100}, title = {{Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics during Set and Reset: Part II - Discrete Grains}}, volume = 64, year = 2017 }