Abstract
Various attempts have been undertaken to reduce the compressive stress
of c-BN thin films. An obvious decrease in stress was realized by
post-deposition annealing up to 900 ?C, as well as by film deposition
with reduced bias after c-BN nucleation. A combined deposition/in-situ
annealing (at 700 ?C) multi-cycle process promotes improved film
adhesion, and when implemented together with reduced ion impact during
deposition, leads to additional stress relaxation for c-BN films.
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