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%0 Journal Article
%1 journals/ibmrd/AntoniadisAC06
%A Antoniadis, Dimitri A.
%A Åberg, Ingvar
%A Chléirigh, Cáit Ní
%A Nayfeh, Osama M.
%A Khaki-Firooz, Ali
%A Hoyt, Judy L.
%D 2006
%J IBM Journal of Research and Development
%K
%N 4-5
%P 363-376
%T Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.
%U http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd50.html#AntoniadisAC06
%V 50
@article{journals/ibmrd/AntoniadisAC06,
added-at = {2023-12-13T02:58:26.000+0100},
author = {Antoniadis, Dimitri A. and Åberg, Ingvar and Chléirigh, Cáit Ní and Nayfeh, Osama M. and Khaki-Firooz, Ali and Hoyt, Judy L.},
biburl = {https://www.bibsonomy.org/bibtex/2f7dfae16769f195f8ef8eb915f7e8831/admin},
ee = {http://dx.doi.org/10.1147/rd.504.0363},
interhash = {85f57a010f1b18d2e1a8a0957c469708},
intrahash = {f7dfae16769f195f8ef8eb915f7e8831},
journal = {IBM Journal of Research and Development},
keywords = {},
number = {4-5},
pages = {363-376},
timestamp = {2023-12-13T02:58:26.000+0100},
title = {Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.},
url = {http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd50.html#AntoniadisAC06},
volume = 50,
year = 2006
}