Abstract
The binding and total exciton energies in zincblende and wurtzite
GaN/Al0.2Ga0.8N quantum wells are calculated taking into account the
existence of graded interfaces. It is shown that a strong exciton energy
blue shift is due to the nonabrupt interfaces. In the case of the
wurtzite phase, a,graded interface I nm thick blue shifts by
approximately 200 meV the exciton total energy practically independent
of the well width. In contrast, in the zincblende phase the blue shift
depends strongly on the well width due to the absence of built in
electric fields related to the piezoelectric and spontaneous
polarizations. (C) 2002 Elsevier Science B.V. All rights reserved.
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