%0 Journal Article %1 WOS:000179259900021 %A Caetano, EWS %A Freire, VN %A Farias, GA %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2002 %I ELSEVIER SCIENCE BV %J JOURNAL OF CRYSTAL GROWTH %K A3. Al. BL and excitons; graded interfaces; nitrides} piezoelectric polarizations; quantum spontaneous wells; {Al. %N 3-4 %P 341-346 %R 10.1016/S0022-0248(02)01759-1 %T Strong exciton energy blue shift in graded wurtzite and zincblende GaN/Al0.2Ga0.8N single quantum wells %V 246 %X The binding and total exciton energies in zincblende and wurtzite GaN/Al0.2Ga0.8N quantum wells are calculated taking into account the existence of graded interfaces. It is shown that a strong exciton energy blue shift is due to the nonabrupt interfaces. In the case of the wurtzite phase, a,graded interface I nm thick blue shifts by approximately 200 meV the exciton total energy practically independent of the well width. In contrast, in the zincblende phase the blue shift depends strongly on the well width due to the absence of built in electric fields related to the piezoelectric and spontaneous polarizations. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000179259900021, abstract = {The binding and total exciton energies in zincblende and wurtzite GaN/Al0.2Ga0.8N quantum wells are calculated taking into account the existence of graded interfaces. It is shown that a strong exciton energy blue shift is due to the nonabrupt interfaces. In the case of the wurtzite phase, a,graded interface I nm thick blue shifts by approximately 200 meV the exciton total energy practically independent of the well width. In contrast, in the zincblende phase the blue shift depends strongly on the well width due to the absence of built in electric fields related to the piezoelectric and spontaneous polarizations. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Caetano, EWS and Freire, VN and Farias, GA}, biburl = {https://www.bibsonomy.org/bibtex/2ec6e938c2459b23e764b19a44943947f/ppgfis_ufc_br}, doi = {10.1016/S0022-0248(02)01759-1}, interhash = {8fc43b70b2091fe899fd2ed3f14e61be}, intrahash = {ec6e938c2459b23e764b19a44943947f}, issn = {0022-0248}, journal = {JOURNAL OF CRYSTAL GROWTH}, keywords = {A3. Al. BL and excitons; graded interfaces; nitrides} piezoelectric polarizations; quantum spontaneous wells; {Al.}, note = {2nd International Specialist Meeting on Bulk Nitride Growth and Related Techniques, AMAZONAS, BRAZIL, MAY 18-23, 2002}, number = {3-4}, pages = {341-346}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Strong exciton energy blue shift in graded wurtzite and zincblende GaN/Al0.2Ga0.8N single quantum wells}, tppubtype = {article}, volume = 246, year = 2002 }