%0 Journal Article %1 noauthororeditor %A Benzohra, Djilali Berbara Mourad Hebali Miloud Abboun Abid Mohammed %A Saïdane, Djilali Chalabi Abdelkader %D 2018 %J Advances in Engineering: an International Journal %K 1T-1C 250nm 3 3C-SiC CMOS DRAM. PSpice level technology %N 01 %P 01-10 %T Low Voltage, High Speed and High Temperature of 1T-1C DRAM in CMOS 3C-SiC 250nm Technology %U http://airccse.com/adeij/papers/2118adeij01.pdf %V 02 %X The digital electronics field is becoming increasingly present in very hostile environments where the temperature is very high. In these environments, the wide bandgap materials such as silicon carbide (SiC) to replace silicon (Si). In this paper, we have studied the one-transistor one-capacitor Dynamic Random Access memory cell (1T-1C DRAM) in CMOSiC-3C 250nm technology. To perform this work we have used PSpice level 3 to study the DC characteristics of MOSiC-3C transistors 250nm technology, and then depending on these characteristics, we studied the most important operations read/write and refresh related to the 1T-1C DRAM cell. This is study has given very excellent results, where we found that our DRAM cell operate under a low supply voltage 2V, wide temperature range from 27°C to 300°C and characterized by high speed operations.

@article{noauthororeditor, abstract = {The digital electronics field is becoming increasingly present in very hostile environments where the temperature is very high. In these environments, the wide bandgap materials such as silicon carbide (SiC) to replace silicon (Si). In this paper, we have studied the one-transistor one-capacitor Dynamic Random Access memory cell (1T-1C DRAM) in CMOSiC-3C 250nm technology. To perform this work we have used PSpice level 3 to study the DC characteristics of MOSiC-3C transistors 250nm technology, and then depending on these characteristics, we studied the most important operations read/write and refresh related to the 1T-1C DRAM cell. This is study has given very excellent results, where we found that our DRAM cell operate under a low supply voltage 2V, wide temperature range from 27°C to 300°C and characterized by high speed operations. }, added-at = {2018-04-02T08:57:45.000+0200}, author = {Benzohra, Djilali Berbara Mourad Hebali Miloud Abboun Abid Mohammed and Saïdane, Djilali Chalabi Abdelkader}, biburl = {https://www.bibsonomy.org/bibtex/25efb2ad8206c223d17e55384de7e438b/adeij_journal}, interhash = {e9809c88285731c2dc34ed307be602f5}, intrahash = {5efb2ad8206c223d17e55384de7e438b}, journal = {Advances in Engineering: an International Journal}, keywords = {1T-1C 250nm 3 3C-SiC CMOS DRAM. PSpice level technology}, language = {English}, month = {march}, number = 01, pages = {01-10}, timestamp = {2018-04-02T08:57:45.000+0200}, title = {Low Voltage, High Speed and High Temperature of 1T-1C DRAM in CMOS 3C-SiC 250nm Technology }, url = {http://airccse.com/adeij/papers/2118adeij01.pdf}, volume = 02, year = 2018 }