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A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 258-259. IEEE, (2023)8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices., , , , , , , , , и 4 other автор(ы). IEEE J. Solid State Circuits, 58 (1): 303-315 (2023)A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices., , , , , , , , , и 8 other автор(ы). ISSCC, стр. 245-247. IEEE, (2021)A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 57 (6): 1936-1949 (2022)13.4 A 22nm 1Mb 1024b-Read and Near-Memory-Computing Dual-Mode STT-MRAM Macro with 42.6GB/s Read Bandwidth for Security-Aware Mobile Devices., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 224-226. IEEE, (2020)A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors., , , , , , , , , и 8 other автор(ы). IEEE J. Solid State Circuits, 55 (10): 2790-2801 (2020)Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices., , , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 68 (5): 1773-1786 (2021)A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices., , , , , , , , , и 8 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices., , , , , , , , , и 4 other автор(ы). ISSCC, стр. 1-3. IEEE, (2022)