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Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.

D. Gajewski, R. Lewis, and B. Decker. Microelectron. Reliab., 54 (12): 2675-2681 (2014)

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Gerhard Gajewski

Wojciech Gajewski

Herbert Gajewski

Conrad Gajewski

Herbert Gajewski

Other publications of authors with the same name

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.I. Ji, A. Mathew, J. Park, N. Oldham, M. McCain, S. Sabri, E. Brunt, B. Hull, D. Lichtenwalner, D. Gajewski and 1 other author(s). IRPS, page 1-4. IEEE, (2023)Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.D. Gajewski, R. Lewis, and B. Decker. Microelectron. Reliab., 54 (12): 2675-2681 (2014)Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies.D. Gajewski, S. Ganguly, S. Sheppard, S. Wood, J. Barner, J. Milligan, and J. Palmour. Microelectron. Reliab., (2018)A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression.B. Schmukler, J. Barner, J. Fisher, D. Gajewski, S. Sheppard, J. Milligan, K. Bothe, S. Ganguly, T. Alcorn, J. Gao and 4 other author(s). BCICTS, page 1-4. IEEE, (2019)Reliability studies of SiC vertical power MOSFETs.D. Lichtenwalner, B. Hull, E. Brunt, S. Sabri, D. Gajewski, D. Grider, S. Allen, J. Palmour, A. Akturk, and J. McGarrity. IRPS, page 2. IEEE, (2018)Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.S. Ganguly, D. Lichtenwalner, C. Isaacson, D. Gajewski, P. Steinmann, R. Foarde, B. Hull, S. Ryu, S. Allen, and J. Palmour. IRPS, page 8. IEEE, (2022)DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).S. Ganguly, K. Bothe, A. Niyonzima, T. Smith, Y. Liu, J. Fisher, F. Radulescu, D. Gajewski, S. Sheppard, J. Milligan and 2 other author(s). IRPS, page 11. IEEE, (2022)GaN HEMTs Design and Modeling for 5G.Y. Liu, J. Wood, Z. Hu, S. Ganguly, J. Fisher, M. Watts, S. Sheppard, D. Gajewski, and B. Noori. IRPS, page 1-4. IEEE, (2023)

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Disambiguation of "Gajewski, Donald A."

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Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.

Please choose a person to relate this publication to

Gerhard Gajewski

Wojciech Gajewski

Herbert Gajewski

Conrad Gajewski

Herbert Gajewski

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Gajewski, Donald A."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.

Please choose a person to relate this publication to

Gerhard Gajewski

Wojciech Gajewski

Herbert Gajewski

Conrad Gajewski

Herbert Gajewski

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.