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Disambiguation of "Uraoka, Yukiharu"

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High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

, , , , , , and . ACS Applied Electronic Materials, 2 (8): 2398--2407 (July 2020)
DOI: 10.1021/acsaelm.0c00348

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Other publications of authors with the same name

Continuous-Wave Green Laser Activation of Transparent InZnO Electrodes for Fully Solution-Processed Oxide Thin-Film Transistors, , , , and . ACS Applied Electronic Materials, (October 2023)P-11: High Performance All-Solution Processed InZnO Thin-Film Transistors via Photo-Functionalization at Varying Fluence and Annealing Environment, , , , , and . SID Symposium Digest of Technical Papers, 51 (1): 1350--1353 (August 2020)Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited)., , , , , , , , , and . IRPS, page 9. IEEE, (2024)Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors, , , , , and . Applied Physics Express, 11 (6): 061103 (May 2018)High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO, , , , , , and . ACS Applied Electronic Materials, 2 (8): 2398--2407 (July 2020)Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200C, , , , , and . Journal of Physics D: Applied Physics, 53 (16): 165103 (February 2020)A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices., , , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)