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Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.

M. Dettling, D. Weißhaupt, H. Funk, M. Kern, F. Berkmann, C. Clausen, M. Oehme, D. Schwarz, J. van Slageren, and J. Schulze. MIPRO, page 17-21. IEEE, (2020)

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Michael Oehme

Claudia Oehme

Peter Oehme

Other publications of authors with the same name

Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.D. Weißhaupt, H. Funk, C. Sürgers, G. Fischer, M. Oehme, D. Schwarz, I. Fischer, J. van Slageren, and J. Schulze. MIPRO, page 45-49. IEEE, (2021)Ge-on-Si Avalanche Photodiodes for LIDAR Applications.M. Wanitzek, M. Oehme, D. Schwarz, K. Guguieva, and J. Schulze. MIPRO, page 8-12. IEEE, (2020)MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate.D. Schwarz, S. Schäfer, L. Seidel, H. Funk, D. Weißhaupt, M. Oehme, V. Schlykow, V. Kiyek, D. Buca, and J. Schulze. MIPRO, page 50-54. IEEE, (2021)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.E. Sigle, D. Weißhaupt, M. Oehme, H. Funk, D. Schwarz, F. Berkmann, and J. Schulze. MIPRO, page 40-44. IEEE, (2021)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well.P. Povolni, D. Schwarz, C. Clausen, Y. Elogail, H. Funk, M. Oehme, D. Weißhaupt, and J. Schulze. MIPRO, page 7-12. IEEE, (2019)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.M. Dettling, D. Weißhaupt, H. Funk, M. Kern, F. Berkmann, C. Clausen, M. Oehme, D. Schwarz, J. van Slageren, and J. Schulze. MIPRO, page 17-21. IEEE, (2020)A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector.A. Köllner, Z. Yu, M. Oehme, J. Anders, M. Kaschel, J. Schulze, and J. Burghartz. IEEE SENSORS, page 1-4. IEEE, (2019)Electroluminescence of SixGe1-x-ySny/Ge1-ySny pin-Diodes Grown on a GeSn Buffer.L. Seidel, S. Schäfer, M. Oehme, D. Buca, G. Capellini, J. Schulze, and D. Schwarz. ESSCIRC, page 165-168. IEEE, (2022)GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection.M. Wanitzek, M. Oehme, C. Spieth, D. Schwarz, L. Seidel, and J. Schulze. ESSCIRC, page 169-172. IEEE, (2022)Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.F. Berkmann, L. Augel, M. Schilling, A. Berrier, D. Schwarz, D. Weißhaupt, M. Oehme, J. Schulze, and I. Fischer. MIPRO, page 32-35. IEEE, (2018)

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Disambiguation of "Oehme, Michael"

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Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.

Please choose a person to relate this publication to

Michael Oehme

Michael Oehme

Michael Oehme

Claudia Oehme

Peter Oehme

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Oehme, Michael"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.

Please choose a person to relate this publication to

Michael Oehme

Michael Oehme

Michael Oehme

Claudia Oehme

Peter Oehme

Other publications of authors with the same name

Disambiguation

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URL
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Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.