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Design and Analysis of Schmitt Trigger Based 10T SRAM in 32 nm Technology.

, , and . iNIS, page 234-237. IEEE, (2017)

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Low Stand-By Power and Process Variation Tolerant FinFET Based SRAM Cell., , , and . iNIS, page 268-273. IEEE, (2016)Low Leakage Noise Tolerant 10T SRAM Cell., , and . VDAT, volume 892 of Communications in Computer and Information Science, page 538-550. Springer, (2018)An efficient image noise removal and enhancement method., , and . SMC, page 3735-3740. IEEE, (2010)Signal Stepping Based Multimode Multi-threshold CMOS Technique for Ground Bounce Noise Reduction in Static CMOS Adders., , and . ISED, page 272-275. IEEE, (2012)Energy Efficient 9T SRAM With R/W Margin Enhanced for beyond Von-Neumann Computation., and . VDAT, page 1-4. IEEE, (2020)Quality Driven Energy Aware Approximated Core Transform Architecture for HEVC Standard., , , and . VDAT, volume 1066 of Communications in Computer and Information Science, page 398-412. Springer, (2019)Fuzzy based diffusion coefficient function in anisotropic diffusion for impulse noise removal., , and . ICVGIP, page 67. ACM, (2012)Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology., , , , and . Circuits and Systems, 2 (4): 326-329 (2011)Design and Analysis of Schmitt Trigger Based 10T SRAM in 32 nm Technology., , and . iNIS, page 234-237. IEEE, (2017)Novel Ultra Low Leakage FinFET Based SRAM Cell., , and . iNIS, page 89-92. IEEE, (2016)