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PSP-Based Scalable MOS Varactor Model.

, , , , , , , , , , , , , и . CICC, стр. 495-502. IEEE, (2007)

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Gennady Uryadov

Gennady Samorodnitsky

Gennady Fedosenko

Gennady Tenin

Gennady Churakov

 

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Unified non-quasi-static MOSFET model for large-signal and small-signal simulations., , , , , , , и . CICC, стр. 823-826. IEEE, (2005)PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs., , , , , , , , , и 1 other автор(ы). CICC, стр. 41-48. IEEE, (2007)Modeling of passive elements and reliability., и . CICC, IEEE, (2009)The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications., , , , , , , , , и . IEEE J. Solid State Circuits, 44 (5): 1415-1424 (2009)SP-SOI: a third generation surface potential based compact SOI MOSFET Model., , , , , , и . CICC, стр. 819-822. IEEE, (2005)SP: an advanced surface-potential-based compact MOSFET model., , , , и . CICC, стр. 233-240. IEEE, (2003)RF distortion analysis with compact MOSFET models., , , , , , , и . CICC, стр. 9-12. IEEE, (2004)Advanced compact models: gateway to modern CMOS design., , , , , , и . ICECS, стр. 638-641. IEEE, (2004)A robust large signal non-quasi-static MOSFET model for circuit simulation., и . CICC, стр. 5-8. IEEE, (2004)Statistical Modeling With the PSP MOSFET Model., , , , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 29 (4): 599-606 (2010)