Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology., and . IEICE Trans. Electron., 93-C (5): 614-618 (2010)Foundation of rf CMOS and SiGe BiCMOS technologies., , , , , , , , , and 12 other author(s). IBM J. Res. Dev., 47 (2-3): 101-138 (2003)40-Gb/s circuits built from a 120-GHz fT SiGe technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 37 (9): 1106-1114 (2002)WR-3 Band Integrated Circuits in InP HBT Technology., , and . ISCAS, page 1-5. IEEE, (2019)Product applications and technology directions with SiGe BiCMOS., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 38 (9): 1471-1478 (2003)A Triple-Push Voltage Controlled Oscillator in 0.13-µm RFCMOS Technology Operating Near 177GHz., , and . IEICE Trans. Electron., 97-C (5): 444-447 (2014)The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs., and . IEICE Trans. Electron., 95-C (5): 785-791 (2012)A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range., , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 69 (2): 309-313 (2022)Recent progress in terahertz monolithic integrated circuits., , and . ISCAS, page 746-749. IEEE, (2012)Reliability and performance scaling of very high speed SiGe HBTs., , , and . Microelectron. Reliab., 44 (3): 397-410 (2004)