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Shared-memory parallelization of the semi-ordered fast iterative method., , , and . SpringSim (HPS), page 217-224. SCS/ACM, (2015)Three-Dimensional MOS Device Simulation on a Connection Machine., , and . PPSC, page 388-393. SIAM, (1991)Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator., , , , and . LSSC, volume 3743 of Lecture Notes in Computer Science, page 594-601. Springer, (2005)Spin-Based CMOS-Compatible Devices., and . LSSC, volume 9374 of Lecture Notes in Computer Science, page 42-49. Springer, (2015)Statistical simulation of gate dielectric wearout, leakage, and breakdown., and . Microelectron. Reliab., 44 (9-11): 1879-1884 (2004)Monte Carlo algorithms for stationary device simulations., , and . Math. Comput. Simul., 62 (3-6): 453-461 (2003)Emerging memory technologies: Trends, challenges, and modeling methods., , and . Microelectron. Reliab., 52 (4): 628-634 (2012)Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study., , and . MIXDES, page 168-171. IEEE, (2020)Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs., and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 3 (1): 52-64 (1984)On smoothing three-dimensional Monte Carlo ion implantation simulation results., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 22 (7): 879-883 (2003)