( en | de | ru )

 

Disambiguation of "Kaczer, Ben"

Author of the publication

copydeleteadd this publication to your clipboard
Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

, , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Ben Novak

Ben Schöttker

Ben Schmehe

Ben Schacher

Ben Schloesser

 

Other publications of authors with the same name

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation., , , , , and . IRPS, page 1-9. IEEE, (2023)Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies., , , , , , , , , and 10 other author(s). IRPS, page 1-6. IEEE, (2021)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , and 2 other author(s). IRPS, page 10. IEEE, (2022)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress., , , , , , , , , and 1 other author(s). IRPS, page 10. IEEE, (2022)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 19 (9): 1569-1582 (2011)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2019)