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Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect., , , , and . IEICE Trans. Electron., 91-C (7): 1110-1116 (2008)Numerical Calculation of Wavelength Demultiplexed Light Switching Using Variable Index Arrayed Waveguide., , , and . IEICE Trans. Electron., 95-C (7): 1258-1264 (2012)Wavelength Demultiplexing and Optical Deflection in Variable Refractive-Index Waveguide Array Based on Selectively Grown GaInAs/InP MQW Structure., , , and . IEICE Trans. Electron., 88-C (5): 1013-1019 (2005)Switching Characteristics in Variable-Index Arrayed Waveguides Using Thin-Film Heater., , , and . IEICE Trans. Electron., 95-C (7): 1265-1271 (2012)Lasing characteristics of GalnAsP SCH-MQW Laser Diode on Directly-bonded InP/Si Substrate., , , , , , , , , and . OECC/PSC, page 1-3. IEEE, (2019)Template Thickness Dependence of GaInAsP MQW Laser Diode Grown on Directly Bonded InP/Si Substrate., , , , , and . OECC/PSC, page 1-3. IEEE, (2019)Lasing Characteristics of GalnAsP SCH MQW High-mesa Laser on Silicon Substrate., , , , , , , , , and . OECC/PSC, page 1-3. IEEE, (2019)