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Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design.

, , , , , and . BCICTS, page 215-218. IEEE, (2018)

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Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz., , , , , , , , , and 24 other author(s). BCICTS, page 232-235. IEEE, (2022)Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications., , , , , , and . BCICTS, page 1-4. IEEE, (2021)DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures., , , , , , , , and . BCICTS, page 1-4. IEEE, (2019)Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown., , , , and . BCICTS, page 1-4. IEEE, (2019)Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers., , , , , and . BCICTS, page 167-170. IEEE, (2023)Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs., , , , , , and . BCICTS, page 1-4. IEEE, (2020)Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs., , , and . BCICTS, page 245-248. IEEE, (2023)The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs., , , , , , , , , and 1 other author(s). BCICTS, page 253-256. IEEE, (2023)Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents., , , , , and . BCICTS, page 190-193. IEEE, (2018)Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design., , , , , and . BCICTS, page 215-218. IEEE, (2018)