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Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2017)Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack., , , , , , , and . Microelectron. Reliab., 48 (11-12): 1769-1771 (2008)Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)Equivalent Noise Temperature Representation for Scaled MOSFETs., , and . IEICE Trans. Electron., 93-C (10): 1550-1552 (2010)Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing., , , , , , , and . Microelectron. Reliab., (2018)Si nanowire FET and its modeling., , , , , , , , and . Sci. China Inf. Sci., 54 (5): 1004-1011 (2011)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT., , , , , , , , and . ESSDERC, page 107-110. IEEE, (2013)Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (4): 746-754 (2014)On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric., , , , , and . Microelectron. Reliab., 54 (6-7): 1133-1136 (2014)