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Design of a high-performance 12T SRAM cell for single event upset tolerance.

C. Qi, Y. Zhang, G. Ma, C. Liu, T. Wang, L. Xiao, M. Huo, and G. Zhai. Sci. China Inf. Sci., (2021)

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Qi Qi

Chunhua Hu

Chunhua Geng

Qi Sun

Qi Wang

Other publications of authors with the same name

Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology.C. Qi, L. Xiao, J. Guo, and T. Wang. Microelectron. Reliab., 55 (6): 863-872 (2015)Design of a high-performance 12T SRAM cell for single event upset tolerance.C. Qi, Y. Zhang, G. Ma, C. Liu, T. Wang, L. Xiao, M. Huo, and G. Zhai. Sci. China Inf. Sci., (2021)Novel technique for P-hit single-event transient mitigation using enhance dummy transistor.T. Wang, L. Xiao, M. Huo, C. Qi, and S. Liu. ISQED, page 243-249. IEEE, (2015)Simulation of Liquid Film Flowing Outside the Elliptical Tube.C. Qi, H. Feng, Q. Lv, and K. Xu. ICICA (2), volume 392 of Communications in Computer and Information Science, page 575-583. Springer, (2013)Single-event upset prediction in static random access memory cell account for parameter variations.M. Huo, G. Ma, B. Zhou, L. Xiao, C. Qi, Y. Zhang, J. Ma, Y. Piao, and T. Wang. Sci. China Inf. Sci., 62 (6): 69404:1-69404:3 (2019)Design of Area-Efficient and Highly Reliable RHBD 10T Memory Cell for Aerospace Applications.J. Guo, L. Zhu, Y. Sun, H. Cao, H. Huang, T. Wang, C. Qi, R. Zhang, X. Cao, L. Xiao and 1 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 26 (5): 991-994 (2018)A fast fault injection platform of multiple SEUs for SRAM-based FPGAs.R. Zhang, L. Xiao, J. Li, X. Cao, C. Qi, J. Li, and M. Wang. Microelectron. Reliab., (2018)Design of High-Reliability Memory Cell to Mitigate Single Event Multiple Node Upsets.H. Li, L. Xiao, C. Qi, and J. Li. IEEE Trans. Circuits Syst. I Regul. Pap., 68 (10): 4170-4181 (2021)Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism.Q. Li, X. Su, J. Guo, and C. Qi. IEEE Access, (2020)The Visual Scanning Behavior and Mental Workload of Drivers at Prairie Highway Intersections With Different Characteristics.Z. Lyu, C. Qi, S. Zhu, and H. Wang. IEEE Access, (2022)

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Disambiguation of "Qi, Chunhua"

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Design of a high-performance 12T SRAM cell for single event upset tolerance.

Please choose a person to relate this publication to

Qi Qi

Chunhua Hu

Chunhua Geng

Qi Sun

Qi Wang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Qi, Chunhua"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Design of a high-performance 12T SRAM cell for single event upset tolerance.

Please choose a person to relate this publication to

Qi Qi

Chunhua Hu

Chunhua Geng

Qi Sun

Qi Wang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Design of a high-performance 12T SRAM cell for single event upset tolerance.