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Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

, , , , , , , , , , , , , , , and . ESSDERC, page 121-124. IEEE, (2012)

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Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities., , , , , , , , , and 6 other author(s). ESSDERC, page 121-124. IEEE, (2012)Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements., , , , , , , , , and . ESSCIRC, page 125-128. IEEE, (2022)Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface., , , , , , , , , and 5 other author(s). ESSDERC, page 295-298. IEEE, (2021)Transport properties of strained silicon nanowires., , , , and . ESSDERC, page 290-293. IEEE, (2012)A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD., , , , , , , and . ESSDERC, page 424-427. IEEE, (2016)Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions., , , , , , , , , and 2 other author(s). ESSDERC, page 255-258. IEEE, (2021)Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , and . ESSDERC, page 210-213. IEEE, (2015)