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Disambiguation of "Tallarico, Andrea Natale"

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TCAD predictions of hot-electron injection in p-type LDMOS transistors.

, , , , , , , , , , and . ESSDERC, page 86-89. IEEE, (2019)

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Natale Barletta

Natale Bizzotto

Giovanni Natale

Nicole Natale

Herbert Natale

 

Other publications of authors with the same name

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate., , , , , , , and . IRPS, page 1-6. IEEE, (2024)An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation., , , and . ICECS, page 562-565. IEEE, (2019)Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors., , , , , and . IRPS, page 1-5. IEEE, (2020)Characterization and Modeling of BTI in SiC MOSFETs., , , , , , , , and . ESSDERC, page 82-85. IEEE, (2019)Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition., , , , , , , and . IRPS, page 10. IEEE, (2022)Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide., , , , , , , and . Microelectron. Reliab., (2017)A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter., , , and . ESSDERC, page 392-395. IEEE, (2022)TCAD predictions of hot-electron injection in p-type LDMOS transistors., , , , , , , , , and 1 other author(s). ESSDERC, page 86-89. IEEE, (2019)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)