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11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier-based stages in 65 nm bulk CMOS.

, , , , and . IET Circuits Devices Syst., 14 (3): 322-326 (2020)

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A Ka-Band SATCOM Transceiver in 65-nm CMOS With High-Linearity TX and Dual-Channel Wide-Dynamic-Range RX for Terrestrial Terminal., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 57 (2): 356-370 (2022)140 GHz Energy-Efficient OOK Receiver using Self-Mixer-Based Power Detector in 65nm CMOS., , and . ICICDT, page 73-76. IEEE, (2022)A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-µm Technology., , , , , , , , , and . IEEE J. Solid State Circuits, 42 (1): 101-110 (2007)A Passive UHF RFID Tag LSI with 36.6% Efficiency CMOS-Only Rectifier and Current-Mode Demodulator in 0.35µm FeRAM Technology., , , , , , , , , and . ISSCC, page 1201-1210. IEEE, (2006)7.6 A High-Speed Back-Illuminated Stacked CMOS Image Sensor with Column-Parallel kT/C-Cancelling S&H and Delta-Sigma ADC., , , , , , , , , and 6 other author(s). ISSCC, page 116-118. IEEE, (2021)A 140 GHz area-and-power-efficient VCO using frequency doubler in 65 nm CMOS., , , and . IEICE Electron. Express, 16 (6): 20190051 (2019)Presentation of contact information of industrial robot's end-effector using vibrotactile sensation., and . HSI, page 172-177. IEEE, (2017)A 40-Gb/s CMOS clocked comparator with bandwidth modulation technique., , , , , , , , and . IEEE J. Solid State Circuits, 40 (8): 1680-1687 (2005)11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier-based stages in 65 nm bulk CMOS., , , , and . IET Circuits Devices Syst., 14 (3): 322-326 (2020)