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Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors., and . Sensors, 15 (4): 7206-7227 (2015)Shared-memory parallelization of the semi-ordered fast iterative method., , , and . SpringSim (HPS), page 217-224. SCS/ACM, (2015)Three-Dimensional MOS Device Simulation on a Connection Machine., , and . PPSC, page 388-393. SIAM, (1991)Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study., , and . MIXDES, page 168-171. IEEE, (2020)Mixed-element decomposition method for three-dimensional grid adaptation., and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 17 (7): 561-572 (1998)Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs., and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 3 (1): 52-64 (1984)On smoothing three-dimensional Monte Carlo ion implantation simulation results., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 22 (7): 879-883 (2003)Calculation of contact currents in device simulation., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 11 (1): 128-136 (1992)On the interplay between meshing and discretization inthree-dimensional diffusion simulation., , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 19 (11): 1233-1240 (2000)Statistical simulation of gate dielectric wearout, leakage, and breakdown., and . Microelectron. Reliab., 44 (9-11): 1879-1884 (2004)