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The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

, , , , , , , , , , and . IRPS, page 1-6. IEEE, (2023)

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The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology., , , , , , , , and . APCCAS, page 532-535. IEEE, (2022)Research on the Latch-Up Mechanism of DSOI at High Temperature., , , , , , , , , and . IRPS, page 16. IEEE, (2024)Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology., , , , , , , and . IRPS, page 18-1. IEEE, (2022)Back-gate effects and detailed characterization of junctionless transistor., , , , , , , and . ESSDERC, page 282-285. IEEE, (2015)The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology., , , , , , , , , and 1 other author(s). IRPS, page 1-6. IEEE, (2023)On the Ion Line Calibration by Plasma Line in ISR Measurements., , , , , , , , , and 1 other author(s). Remote. Sens., 15 (6): 1553 (March 2023)Nano-scaled transistor reliability characterization at nano-second regime., , , , , , , and . Sci. China Inf. Sci., (2021)A Novel NH3 Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature., , , , , , , , , and 2 other author(s). IEEE Trans. Instrum. Meas., (2024)Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism., , , , and . Microelectron. Reliab., 52 (6): 1227-1232 (2012)