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Test-circuit-based extraction of inter- and intra-chip MOSFET-performance variations for analog-design reliability., , , , , , , , and . CICC, page 357-360. IEEE, (2001)Circuit Simulation Models for Coming MOSFET Generations., , , , , , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 85-A (4): 740-748 (2002)A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission., , , , , , , and . IEICE Trans. Electron., 88-C (5): 811-816 (2005)1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation., , , , , , , , , and 1 other author(s). IEICE Trans. Electron., 88-C (2): 247-254 (2005)A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential., , , , , , , , , and 1 other author(s). IEICE Trans. Electron., 88-C (5): 1079-1086 (2005)Correlation method of circuit-performance and technology fluctuations for improved design reliability., , , , , , , , , and . ASP-DAC, page 39-44. ACM, (2001)Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design., , , , , , , , , and . ASP-DAC, page 179-183. ACM, (2003)