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Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides, , , , , , , and . Physica~E, 40 (6): 2217--2219 (April 2008)Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots, , , , , , , , , and 1 other author(s). Appl.~Phys.~Lett., 89 (26): 263109 (2006)Multi-excitonic complexes in single InGaN quantum dots, , , , , , , , and . Appl. Phys. Lett., 84 (20): 4023--4025 (2004)Correlation of structural and few-particle properties of self-organized InAs/GaAs quantum dots, , , , and . Phys.~Rev.~B, 71 (15): 155325 (2005)Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots, , , , , , , and . J. Appl. Phys., 101 (11): 113708 (2007)Size-Dependent Fine-Structure Splitting in Self-Organized InAs/GaAs Quantum Dots, , , , , and . Phys.~Rev.~Lett., 95 (25): 257402 (2005)The Excitonic Fine Structure. talk at Doktorandenseminar of Sfb787 Graduiertenkolleg, (May 2008)